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OCAU News
Storage Tech Updates (0 Comments) (link)
 Thursday, 4-August-2022  20:13:02 (GMT +10) - by MUTMAN

Micron thought they had some pretty big news today, saying it has begun volume production of the industry's first 232-layer triple-level cell (TLC) NAND flash memory chips with huge gains in area density, capacity, energy efficiency, and performance. In short, it's an improvement over 176-layer NAND in practically every conceivable way. Or to put it in Micron's own words, this is a "watershed moment for storage innovation," serving as the first proof that it can scale 3D NAND flash to more than 200 layers in volume production. Not that it was an easy achievement by any stretch, but an important one.

SK hynix not to be outdone decided to unveil 238-layer NAND. The industry's highest. SK hynix has just announced that it's developed the industry's highest 238-layer NAND flash, with its latest 238-layer 512Gb triple-level cell (TLC) 4D NAND flash going out to customers and starting mass production in 1H 2023.

AMD + Phison tease PCIe 5.0 SSD on Ryzen 7000 series at 10GB/sec+. The new super-fast demo was shown off during Flash Memory Summit 2022 (FMS 2022) where Phison was showing off its new PS5026-E26 PCIe controller, which was used on an ASUS ROG Strix X670 HERO motherboard, pushing 10GB/sec+ in both reads and writes (while the SSD itself can push 12GB/sec reads).

SK hynix also revealed a 96GB DDR5 CXL 2.0 memory expansion solution. The new SK hynix CXL memory ecosystem arrives in the EDSFF (Enterprise & Data Center Standard Form Factor) E3.S form factor, with support for next-gen PCIe 5.0 x8 and standard DDR5 memory that packs CXL controllers. As for CXL: it's based on PCIe and is a new standardized interface that boosts efficiency by utilizing CPUs, GPUs, accelerators, and memory.



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All original content copyright James Rolfe. All rights reserved. No reproduction allowed without written permission.